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DG3001/3002/3003
New Product
Vishay Siliconix
Low-Voltage Sub-Ohm SPST/SPDT MICRO FOOTr Analog Switch
FEATURES
D MICRO FOOT Chip Scale Package (1.0 x 1.5 mm) D Low Voltage Operation (1.8 V to 5.5 V) D Low On-Resistance - rDS(on): 0.4 W D Fast Switching - tON : 47 ns, tOFF: 40 ns D Low Power Consumption D TTL/CMOS Compatible
BENEFITS
D D D D Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space
APPLICATIONS
D D D D D D Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems PCM Cards PDA
DESCRIPTION
The DG3001/DG3002/DG3003 are monolithic CMOS analog switches designed for high performance switching of analog signals. The DG3001 and DG3002 are configured as SPST switches, and the DG3003 is an SPDT switch. Combining low power, high speed (tON: 47 ns, tOFF: 40 ns), low on-resistance (rDS(on): 0.4 W) and small physical size (MICRO FOOT, 6-bump), the DG3001/DG3002/DG3003 are ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG3001/DG3002/DG3003 are built on Vishay Siliconix's low voltage JI2 process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
MICRO FOOT (6-Bump) DG3001DB
V+ IN GND
B1 B2 B3 A1 A2 A3
MICRO FOOT (6-Bump) DG3002DB
NO (Source1) COM COM V+ IN GND
B1 B2 B3 A1 A2 A3
MICRO FOOT (6-Bump) DG3003DB
NC (Source1) COM COM V+ IN GND
B1 B2 B3 A1 A2 A3
NO (Source1) COM NC (Source2)
Top View
Top View
Top View
A1 Locator
A1 Locator
A1 Locator
XXX 3003
XXX 3002
Device Marking: 3001 xxx = Date/Lot Traceability Code
XXX 3001
Device Marking: 3002 xxx = Date/Lot Traceability Code
Device Marking: 3003 xxx = Date/Lot Traceability Code
TRUTH TABLE
Logic
0 1
ORDERING INFORMATION
NO
OFF ON -40 to 85C
NC
ON OFF
Temp Range
Package
MICRO FOOT: 6-Bump (3 2, 0.5-mm pitch, 165-mm nom. 165 mm nom bump height)
Part Number
DG3001DB DG3002DB DG3003DB
Document Number: 72505 S-32069--Rev. A, 27-Oct-03
www.vishay.com
1
DG3001/3002/3003
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (NO, NC, COM) . . . . . . . . . . . . . . . . . . . . . . . . "250 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "400 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150C Package Reflow Conditionsb VPR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215C IR/Convection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220C Power Dissipation (Packages)c 6-Bump, 2 x 3 MICRO FOOTd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes: a Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b Refer to IPC/JEDEC (J-STD-020A) c All bumps soldered to PC Board. d Derate 3.1 mW/_C above 70_C
New Product
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistanced rON Flatnessd rON Matchd Switch Off Leakage Current f VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Currentf ICOM(on) V+ = 3.3 V VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Full Room Full Room Room Room Full Room Full Room Full 1 -10 1 -10 1 -10 0 0.4 0.1 0.01 V+ 0.7 0.8 0.2 0.05 1 10 1 10 1 10 nA W V
Limits
-40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
Digital Control
Input High Voltage Input Low Voltage Input Capacitanced Input Currentd
VINH
Full Full Full VIN = 0 or V+ Full
2 0.4 5 -1 1
VINL
Cin
V pF mA
IINL or IINH
Dynamic Characteristics
Turn-On Timed Turn-Off Timed Break-Before-Make Timed Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W CL = 5 pF f = 100 kHz W, pF, VIN = 0 or V+, f = 1 MHz VNO or VNC = 2 0 V RL = 300 W CL = 35 pF 2.0 V, W, Figure 1 and 2 Room Full Room Full Room Room Room Room Room Room 1 47 40 6 64 -70 -70 100 340 pC dB 71 59 ns
pF
Power Supply
Power Supply Range Power Supply Currentd V+ I+ VIN = 0 or V+ 2.7 0.1 3.3 1.0 V mA
Notes: a. Room = 25C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. www.vishay.com Document Number: 72505 S-32069--Rev. A, 27-Oct-03
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DG3001/3002/3003
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.00 1.75 r ON - On-Resistance ( W ) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0 1 2 3 4 5 V+ = 1.8 V V+ = 2 V V+ = 2.7 V V+ = 3 V V+ = 5 V V+ = 3.3 V 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vishay Siliconix
rON vs. VCOM and Single Supply Voltage
T = 25 _C IS = 10 mA r ON - On-Resistance ( W )
1.00
rON vs. Analog Voltage and Temperature
V+ = 3 V IS = 10 mA
0.80
0.60
85_C 25_C
0.40 -40_C 0.20
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
Supply Current vs. Temperature
10000 1000 I+ - Supply Current (nA) I+ - Supply Current (A) V+ = 5 V VIN = 0 V 100 100 mA 10 mA 1 mA 100 mA 10 mA 1 mA 100 nA 10 nA 1 -60 1 nA -40 -20 0 20 40 60 80 100
Supply Current vs. Input Switching Frequency
V+ = 5 V
10
10
100
1K
10 K
100 K
1M
10 M
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
1000 V+ = 5 V ICOM(on) Leakage Current (pA) 250 200 150 100 50 0 -50 -100 -150 -200 10 -60 -40 -20 0 20 40 60 80 100 -250 0 1
Leakage vs. Analog Voltage
V+ = 5 V ICOM(off)
Leakage Current (pA)
100
ICOM(on) INO(off), INC(off)
ICOM(off) INO(off), INC(off)
2
3
4
5
Temperature (_C) Document Number: 72505 S-32069--Rev. A, 27-Oct-03
VCOM, VNO, VNC - Analog Voltage (V) www.vishay.com
3
DG3001/3002/3003
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
100 t ON, t OFF - Switching Time (ns) 90 Loss, OIRR, XTALK (dB) 80 70 60 50 40 30 20 10 0 -60 -40 -20 0 20 40 60 80 100 tOFF V+ = 3 V tOFF V+ = 2 V tON V+ = 3 V tON V+ = 2 V
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 100 K 1M 10 M Frequency (Hz) 100 M 1G V+ = 3 V RL = 50 W XTALK OIRR LOSS
Temperature (_C)
Switching Threshold vs. Supply Voltage
3.0 2.5 Q - Charge Injection (pC) 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 V+ - Supply Voltage (V) 250 200 V T - Switching Threshold (V) 150 100 50 0 -50 -100 -150 -200 -250 0
Charge Injection vs. Analog Voltage
V+ = 5 V
V+ = 2 V
V+ = 3 V
1
2
3
4
5
VCOM - Analog Voltage (v)
www.vishay.com
4
Document Number: 72505 S-32069--Rev. A, 27-Oct-03
DG3001/3002/3003
New Product
TEST CIRCUITS
V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND RL 300 W CL 35 pF COM Switch Output VOUT Switch Output 0V tON tOFF VINH VINL 0.9 x VOUT
Vishay Siliconix
50%
tr t 5 ns tf t 5 ns
CL (includes fixture and stray capacitance) V OUT + V COM R L ) R ON RL
Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense.
FIGURE 1. Switching Time
V+ Logic Input COM VO RL 300 W GND CL 35 pF VINH VINL tr <5 ns tf <5 ns
V+ VNO VNC NO NC IN
VNC = VNO VO Switch Output 0V
90%
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen + Vgen
V+ COM IN GND NC or NO VOUT CL = 1 nF
VOUT IN
DVOUT
On
Off Q = DVOUT x CL
On
VIN = 0 - V+ IN depends on switch configuration: input polarity determined by sense of switch.
FIGURE 3. Charge Injection
Document Number: 72505 S-32069--Rev. A, 27-Oct-03 www.vishay.com
5
DG3001/3002/3003
Vishay Siliconix
TEST CIRCUITS
New Product
V+ 10 nF V+ NC or NO IN COM RL Analyzer V COM Off Isolation + 20 log V NO NC 0V, 2.4 V
GND
FIGURE 4. Off-Isolation
V+ 10 nF V+ COM Meter 0 V, 2.4 V IN NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
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6
Document Number: 72505 S-32069--Rev. A, 27-Oct-03
DG3001/3002/3003
New Product
PACKAGE OUTLINE MICRO FOOT: 6-BUMP (3 X 2, 0.5-mm PITCH, 165-mm BUMP HEIGHT)
Vishay Siliconix
6 O 0.150 X 0.180 Note 2 Solder Mask O X Pad Dia. + 0.1 0.5 Silicon 0.5 A Recommended Land Pattern A1 Bump Note 1 Index-Bump A1 Note 3 3 b Diameter A e B S Top Side (Die Back) S e D NOTES (Unless Otherwise Specified): 1. 2. 3. Bump is Eutectic 63/57 Sn/Pb. Non-solder mask defined copper landing pad. Laser Mark on silicon die back; no coating. Shown is not actual marking; sample only. E 2 1 A2
XXX 3003
MILLIMETERS* Dim A A1 A2 b D E e S
0.245
INCHES Min
0.0240 0.0055 0.0185 0.0071 0.0587 0.0390
Min
0.610 0.140 0.470 0.180 1.490 0.990 0.5 BASIC
Max
0.685 0.190 0.495 0.250 1.515 1.015
Max
0.0270 0.0075 0.0195 0.0098 0.0596 0.0400
0.0197 BASIC 0.258 0.0096 0.0101
* Use millimeters as the primary measurement.
Document Number: 72505 S-32069--Rev. A, 27-Oct-03
www.vishay.com
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